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MMBZ12VALT1G Технические параметры

ON Semiconductor  MMBZ12VALT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 11.4V
Number of Elements 2 Elements
Reverse Stand-off Voltage 8.5V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Type Zener
Applications General Purpose
Power Rating 40W
Voltage - Rated DC 12V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Depth 1.3mm
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBZ*A
Pin Count 3
Max Output Current 2.35A
Operating Supply Voltage 8.5V
Working Voltage 8.5V
Leakage Current 200nA
Element Configuration Common Anode
Power Dissipation 40W
Power Line Protection No
Max Reverse Leakage Current 200nA
Voltage - Clamping (Max) @ Ipp 17V
Clamping Voltage 17V
Peak Pulse Current 2.35A
Max Surge Current 2.35A
Peak Pulse Power 40W
Direction Unidirectional
Test Current 1mA
Forward Voltage 900mV
Reverse Breakdown Voltage 11.4V
Max Breakdown Voltage 12.6V
ESD Protection Yes
Number of Bidirectional Channels 1Bidirectional Channel
Height 1.01mm
Length 2.9mm
Width 1.4mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBZ12VALT1G Документы

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