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ON Semiconductor MMBZ16VALT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Zener - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 4 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Breakdown Voltage / V | 16V | |
| Number of Elements | 2 Elements | |
| Reverse Stand-off Voltage | 13V | |
| Operating Temperature | -55°C~150°C | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Tolerance | ±5% | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.10.00.50 | |
| Max Power Dissipation | 225mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reference Standard | IEC-61000-4-2 | |
| Configuration | 1 Pair Common Anode | |
| Element Configuration | Common Anode | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 10mA | |
| Max Reverse Leakage Current | 50nA | |
| Clamping Voltage | 23V | |
| Peak Pulse Current | 1.7A | |
| Peak Pulse Power | 40W | |
| Direction | Unidirectional | |
| Test Current | 1mA | |
| Zener Voltage | 16V | |
| Min Breakdown Voltage | 15.2V | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |