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MMBZ33VALT1 Технические параметры

ON Semiconductor  MMBZ33VALT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка ON Semiconductor
Mount Surface Mount
Package / Case SOT-23
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 31.35V
Number of Elements 2 Elements
Reverse Stand-off Voltage 26V
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Composition Zener
HTS Code 8541.10.00.50
Power Rating 40W
Voltage - Rated DC 33V
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 240
Depth 1.3mm
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MMBZ*A
Pin Count 3
Operating Supply Voltage 26V
Working Voltage 26V
Polarity Unidirectional
Number of Channels 2Channels
Leakage Current 50nA
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Power Line Protection No
Clamping Voltage 46V
Peak Pulse Current 870mA
Max Surge Current 870mA
Peak Pulse Power 40W
Direction Bidirectional
Reference Voltage 33V
Voltage Tol-Max 5%
Working Test Current 1mA
Min Breakdown Voltage 31.35V
Length 2.9mm
Width 1.4mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

MMBZ33VALT1 Документы

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