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MPSA43ZL1G Технические параметры

ON Semiconductor  MPSA43ZL1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 200V
Collector-Emitter Saturation Voltage 500mV
Number of Elements 1 Element
hFEMin 25
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2009
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
HTS Code 8541.21.00.95
Voltage - Rated DC 200V
Max Power Dissipation 625mW
Свойство продукта Значение свойства
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPSA43
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Transition Frequency 50MHz
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
RoHS Status RoHS Compliant
Lead Free Lead Free

MPSA43ZL1G Документы

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