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MPSH11 Технические параметры

ON Semiconductor  MPSH11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Factory Lead Time 36 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 195mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 25V
Number of Elements 1 Element
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 25V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Current Rating 50mA
Frequency 650MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 350mW
Output Power 50mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Transition Frequency 650MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 50mA
Collector-Base Capacitance-Max 0.7pF
Height 6.35mm
Length 6.35mm
Width 6.35mm
RoHS Status RoHS Compliant
Lead Free Lead Free

MPSH11 Документы

MPSH11 brand manufacturers: ON Semiconductor, Anli stock, MPSH11 reference price.ON Semiconductor. MPSH11 parameters, MPSH11 Datasheet PDF and pin diagram description download.You can use the MPSH11 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MPSH11 pin diagram and circuit diagram and usage method of function,MPSH11 electronics tutorials.You can download from the Anli.