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MPSH11_D27Z Технические параметры

ON Semiconductor  MPSH11_D27Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 50mA
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Свойство продукта Значение свойства
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 350mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 650MHz
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MPSH11_D27Z Документы

MPSH11_D27Z brand manufacturers: ON Semiconductor, Anli stock, MPSH11_D27Z reference price.ON Semiconductor. MPSH11_D27Z parameters, MPSH11_D27Z Datasheet PDF and pin diagram description download.You can use the MPSH11_D27Z Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MPSH11_D27Z pin diagram and circuit diagram and usage method of function,MPSH11_D27Z electronics tutorials.You can download from the Anli.