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MSD2714AT1G Технические параметры

ON Semiconductor  MSD2714AT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 25V
Number of Elements 1 Element
hFEMin 90
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Свойство продукта Значение свойства
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Power - Max 225mW
Gain Bandwidth Product 650MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 1mA 6V
Transition Frequency 650MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.7pF
RoHS Status RoHS Compliant
Lead Free Lead Free
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MSD2714AT1G Документы

MSD2714AT1G brand manufacturers: ON Semiconductor, Anli stock, MSD2714AT1G reference price.ON Semiconductor. MSD2714AT1G parameters, MSD2714AT1G Datasheet PDF and pin diagram description download.You can use the MSD2714AT1G Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MSD2714AT1G pin diagram and circuit diagram and usage method of function,MSD2714AT1G electronics tutorials.You can download from the Anli.