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MUN2211T3 Технические параметры

ON Semiconductor  MUN2211T3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 35
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Voltage - Rated DC 50V
Max Power Dissipation 338mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MUN2211
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Polarity NPN
Element Configuration Single
Power Dissipation 230mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

MUN2211T3 Документы

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