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MUN5113T1 Технические параметры

ON Semiconductor  MUN5113T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 80
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
HTS Code 8541.21.00.95
Voltage - Rated DC -50V
Max Power Dissipation 202mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MUN51**T
Pin Count 3
Qualification Status Not Qualified
Polarity PNP
Element Configuration Single
Power Dissipation 202mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 47 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

MUN5113T1 Документы

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