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MUR2100EG Технические параметры
ON Semiconductor MUR2100EG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 2 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | DO-204AL, DO-41, Axial | |
| Surface Mount | NO | |
| Number of Pins | 2Pins | |
| Weight | 4.535924g | |
| Diode Element Material | SILICON | |
| Breakdown Voltage / V | 1kV | |
| Number of Elements | 1 Element | |
| Packaging | Bulk | |
| Series | SWITCHMODE™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -65°C | |
| Applications | ULTRA FAST RECOVERY POWER | |
| Additional Feature | FREE WHEELING DIODE | |
| HTS Code | 8541.10.00.80 | |
| Voltage - Rated DC | 1kV | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 2A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MUR2100 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 2 | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 10μA @ 1000V | |
| Output Current | 2A | |
| Voltage - Forward (Vf) (Max) @ If | 2.2V @ 2A | |
| Case Connection | ISOLATED | |
| Forward Current | 2A | |
| Operating Temperature - Junction | -65°C~175°C | |
| Max Surge Current | 35A | |
| Halogen Free | Halogen Free | |
| Voltage - DC Reverse (Vr) (Max) | 1000V | |
| Forward Voltage | 2.2V | |
| Max Reverse Voltage (DC) | 1kV | |
| Average Rectified Current | 2A | |
| Number of Phases | 1Phase | |
| Reverse Recovery Time | 100 ns | |
| Peak Reverse Current | 10μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV | |
| Peak Non-Repetitive Surge Current | 35A | |
| Reverse Voltage | 1kV | |
| Max Forward Surge Current (Ifsm) | 35A | |
| Recovery Time | 100 ns | |
| Diameter | 2.7mm | |
| Height | 5.2mm | |
| Length | 6.35mm | |
| Width | 25.4mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
MUR2100EG Документы
- DatasheetsMUR2100E MUR2100EG-ON-Semiconductor-datasheet-7627835.pdf
- Environmental InformationMaterial Declaration MUR2100EG
- PCN Design/SpecificationCopper to Nickel Plated 19/Nov/2015
- RohsStatementON-Semiconductor-MUR2100EG.pdf
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