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MURD620CTG Технические параметры

ON Semiconductor  MURD620CTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Tube
Series SWITCHMODE™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications ULTRA FAST RECOVERY
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Voltage - Rated DC 200V
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MURD620CT
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1V @ 3A
Forward Current 6A
Operating Temperature - Junction -65°C~175°C
Max Surge Current 50A
Output Current-Max 3A
Halogen Free Halogen Free
Forward Voltage 1.2V
Max Reverse Voltage (DC) 200V
Average Rectified Current 3A
Number of Phases 1Phase
Reverse Recovery Time 35 ns
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Peak Non-Repetitive Surge Current 50A
Reverse Voltage 200V
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 50A
Recovery Time 35 ns
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MURD620CTG Документы

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