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MURS120T3G Технические параметры

ON Semiconductor  MURS120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Breakdown Voltage / V 200V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications HIGH VOLTAGE ULTRA FAST RECOVERY POWER
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 200V
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MURS120
Pin Count 2
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 200V
Output Current 1A
Voltage - Forward (Vf) (Max) @ If 875mV @ 1A
Forward Current 2A
Operating Temperature - Junction -65°C~175°C
Max Surge Current 40A
Forward Voltage 875mV
Max Reverse Voltage (DC) 200V
Average Rectified Current 2A
Number of Phases 1Phase
Reverse Recovery Time 35 ns
Peak Reverse Current 2μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Peak Non-Repetitive Surge Current 40A
Reverse Voltage 200V
Max Forward Surge Current (Ifsm) 40A
Recovery Time 35 ns
Height 2.13mm
Length 4.32mm
Width 3.56mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MURS120T3G Документы

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