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MURS360T3G Технические параметры

ON Semiconductor  MURS360T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Breakdown Voltage / V 600V
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications HIGH VOLTAGE ULTRA FAST RECOVERY POWER
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 600V
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number MURS360
Pin Count 2
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 600V
Output Current 3A
Voltage - Forward (Vf) (Max) @ If 1.25V @ 3A
Forward Current 4A
Operating Temperature - Junction -65°C~175°C
Max Surge Current 75A
Halogen Free Halogen Free
Forward Voltage 1.28V
Max Reverse Voltage (DC) 600V
Average Rectified Current 3A
Number of Phases 1Phase
Reverse Recovery Time 75 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 100A
Reverse Voltage 600V
Max Forward Surge Current (Ifsm) 100A
Recovery Time 75 ns
Height 2.13mm
Length 6.86mm
Width 5.84mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MURS360T3G Документы

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