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NDC7001C Технические параметры

ON Semiconductor  NDC7001C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Weight 36mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 510mA 340mA
Number of Elements 2 Elements
Turn Off Delay Time 8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 2Ohm
Max Power Dissipation 700mW
Terminal Form GULL WING
Current Rating 350mA
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 960mW
Turn On Delay Time 2.8 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 510mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 10ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 510mA
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.51A
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 2.1 V
Min Breakdown Voltage 60V
Height 900μm
Length 3mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NDC7001C Документы

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