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NDC7003P Технические параметры

ON Semiconductor  NDC7003P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 23 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Weight 36mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 340mA
Number of Elements 2 Elements
Turn Off Delay Time 8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 5Ohm
Voltage - Rated DC -50V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating -220mA
Number of Channels 2Channels
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 3.2 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 340mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 66pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 10V
Rise Time 10ns
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) -340mA
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.34A
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs -1.9 V
Min Breakdown Voltage 60V
Height 1.1mm
Length 3mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NDC7003P Документы

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