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NDD60N360U1-35G Технические параметры

ON Semiconductor  NDD60N360U1-35G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 114W Tc
Turn Off Delay Time 26 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 360m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 20ns
Vgs (Max) ±25V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 64 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NDD60N360U1-35G Документы

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