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NDD60N550U1-35G Технические параметры
ON Semiconductor NDD60N550U1-35G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) | |
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Current - Continuous Drain (Id) @ 25℃ | 8.2A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 94W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2010 | |
| Pbfree Code | yes | |
| Part Status | Obsolete |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| ECCN Code | EAR99 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 550m Ω @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
| Drain to Source Voltage (Vdss) | 600V | |
| Vgs (Max) | ±25V | |
| Continuous Drain Current (ID) | 8.2A | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NDD60N550U1-35G Документы
- DatasheetsNDD60N550U1
- PCN Obsolescence/ EOLMult Dev EOL 22/Dec/2017
- PCN Design/SpecificationNDD60NYYY 25/Jan/2017
- ReachStatementON-Semiconductor-company-79.pdf
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