Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
ON Semiconductor NDD60N550U1T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) | |
| Factory Lead Time | 17 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Current - Continuous Drain (Id) @ 25℃ | 8.2A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 94W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Configuration | Single | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 550m Ω @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
| Drain to Source Voltage (Vdss) | 600V | |
| Vgs (Max) | ±25V | |
| Continuous Drain Current (ID) | 8.2A | |
| Drain Current-Max (Abs) (ID) | 8.5A | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |