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NDD60N900U1-1G Технические параметры

ON Semiconductor  NDD60N900U1-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Factory Lead Time 5 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Mount Through Hole
Power Dissipation (Max) 74W Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 5.7A Tc
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±25V
Continuous Drain Current (ID) 5.7A
Drain Current-Max (Abs) (ID) 5.9A
RoHS Status RoHS Compliant
Lead Free Lead Free

NDD60N900U1-1G Документы

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