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NDS0605-F169 Технические параметры
ON Semiconductor NDS0605-F169 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Supplier Device Package | SOT-23-3 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Current - Continuous Drain (Id) @ 25℃ | 180mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Mfr | onsemi | |
| Power Dissipation (Max) | 360mW (Ta) | |
| Product Status | Obsolete | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Package Description | SOT-23, 3 PIN | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | 318BM | |
| Operating Temperature-Min | -55 °C | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | NDS0605-F169 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ON Semiconductor | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Risk Rank | 5.7 | |
| Drain Current-Max (ID) | 0.18 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - | |
| Pbfree Code | Yes | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 79 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 5 Ω | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| FET Feature | - |
NDS0605-F169 Документы
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