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NDS352AP Технические параметры
ON Semiconductor NDS352AP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 10 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Weight | 30mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 900mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 500mW Ta | |
| Turn Off Delay Time | 35 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 500mOhm | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Voltage - Rated DC | -30V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | -900mA | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500mW | |
| Turn On Delay Time | 8 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 135pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V | |
| Rise Time | 16ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 16 ns | |
| Continuous Drain Current (ID) | 900mA | |
| Threshold Voltage | -800mV | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 0.9A | |
| Drain to Source Breakdown Voltage | -30V | |
| Dual Supply Voltage | -30V | |
| Max Junction Temperature (Tj) | 150°C | |
| Nominal Vgs | -1.7 V | |
| Height | 1.22mm | |
| Width | 3.05mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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