[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

NDS355AN Технические параметры

ON Semiconductor  NDS355AN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 30mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.7A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 500mW Ta
Turn Off Delay Time 13 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 85mOhm
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 1.7A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 5V
Rise Time 32ns
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.6 V
Height 1.22mm
Length 2.92mm
Width 3.05mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

NDS355AN Документы

NDS355AN brand manufacturers: ON Semiconductor, Anli stock, NDS355AN reference price.ON Semiconductor. NDS355AN parameters, NDS355AN Datasheet PDF and pin diagram description download.You can use the NDS355AN Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NDS355AN pin diagram and circuit diagram and usage method of function,NDS355AN electronics tutorials.You can download from the Anli.