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NDS8858H Технические параметры
ON Semiconductor NDS8858H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 230.4mg | |
| Current - Continuous Drain (Id) @ 25℃ | 6.3A 4.8A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 40 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 1W | |
| Current Rating | 4.8A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 2.5W | |
| FET Type | N and P-Channel | |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 4.8A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Rise Time | 20ns | |
| Fall Time (Typ) | 19 ns | |
| Continuous Drain Current (ID) | 4.8A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 30V | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NDS8858H Документы
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