Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
ON Semiconductor NDS9953A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 21 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1998 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | SMD/SMT | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 900mW | |
| Current Rating | -2.9A | |
| Row Spacing | 6.3 mm | |
| Element Configuration | Dual | |
| Power Dissipation | 2W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 130m Ω @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | |
| Rise Time | 21ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 8 ns | |
| Continuous Drain Current (ID) | 2.9A | |
| Threshold Voltage | -1.6V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -30V | |
| Dual Supply Voltage | -30V | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | -1.6 V | |
| Width | 4.05mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |