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NDS9953A Технические параметры

ON Semiconductor  NDS9953A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Number of Elements 2 Elements
Turn Off Delay Time 21 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Voltage - Rated DC -30V
Max Power Dissipation 900mW
Current Rating -2.9A
Row Spacing 6.3 mm
Element Configuration Dual
Power Dissipation 2W
Свойство продукта Значение свойства
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 130m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 2.9A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
FET Feature Logic Level Gate
Nominal Vgs -1.6 V
Width 4.05mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

NDS9953A Документы

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