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NE5517DR2G Технические параметры

ON Semiconductor  NE5517DR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 16-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 16Pins
Weight 665.986997mg
Number of Elements 2 Elements
Operating Temperature 0°C~70°C
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16Terminations
ECCN Code EAR99
Packing Method TAPE AND REEL
Max Power Dissipation 1.125W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Number of Functions 2Functions
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NE5517
Pin Count 16
Output Type Push-Pull
Свойство продукта Значение свойства
Operating Supply Voltage 30V
Power Supplies +-15V
Number of Circuits 2Circuits
Operating Supply Current 2.6mA
Power Dissipation 1.125W
Output Current 350μA
Slew Rate 50V/μs
Amplifier Type Transconductance
Common Mode Rejection Ratio 80 dB
Current - Input Bias 400nA
Max Input Voltage -3V
Voltage - Supply, Single/Dual (±) 4V~44V ±2V~22V
Halogen Free Halogen Free
Output Current per Channel 650μA
Supply Type Dual, Single
Input Offset Voltage (Vos) 5mV
Neg Supply Voltage-Nom (Vsup) -15V
Unity Gain BW-Nom 2000 kHz
Average Bias Current-Max (IIB) 8μA
Low-Offset NO
Frequency Compensation YES
Voltage - Input Offset 400μV
Bias Current-Max (IIB) @25C 5μA
Nominal Gain Bandwidth Product 2MHz
Height 1.5mm
Length 10mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NE5517DR2G Документы

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