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NGB8207NT4G Технические параметры

ON Semiconductor  NGB8207NT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 365V
Number of Elements 1 Element
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 165W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number NGB8207
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Rise Time-Max 2700ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Logic
Power - Max 165W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 365V
Max Collector Current 20A
Turn On Time 2450 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 4V, 20A
Turn Off Time-Nom (toff) 14700 ns
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2V
Fall Time-Max (tf) 15000ns
RoHS Status RoHS Compliant
Lead Free Lead Free
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