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NGD8201NT4G Технические параметры

ON Semiconductor  NGD8201NT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 440V
Number of Elements 1 Element
Test Conditions 300V, 9A, 1k Ω, 5V
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 400V
Max Power Dissipation 125W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number NGD8201N
Pin Count 3
JESD-30 Code R-PSSO-G2
Rise Time-Max 8000ns
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Input Type Logic
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 440V
Max Collector Current 20A
Max Breakdown Voltage 440V
Turn On Time 6500 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff) 18500 ns
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C -/5μs
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2.1V
Fall Time-Max (tf) 14000ns
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NGD8201NT4G Документы

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