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NGTB15N135IHRWG Технические параметры

ON Semiconductor  NGTB15N135IHRWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 1.35kV
Test Conditions 600V, 15A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 357W
Свойство продукта Значение свойства
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 357W
Collector Emitter Voltage (VCEO) 2.65V
Max Collector Current 30A
Voltage - Collector Emitter Breakdown (Max) 1350V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 15A
IGBT Type Trench Field Stop
Gate Charge 156nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C -/170ns
Switching Energy 420μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NGTB15N135IHRWG Документы

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