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NGTB15N60S1EG Технические параметры

ON Semiconductor  NGTB15N60S1EG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 15A, 22 Ω, 15V
Turn Off Delay Time 170 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 117W
Pin Count 3
Element Configuration Single
Power Dissipation 47W
Свойство продукта Значение свойства
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 65 ns
Power - Max 117W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 30A
Reverse Recovery Time 270 ns
JEDEC-95 Code TO-220AB
Turn On Time 93 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 15A
Turn Off Time-Nom (toff) 440 ns
IGBT Type NPT
Gate Charge 88nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 65ns/170ns
Switching Energy 550μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 15.75mm
Length 10.28mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NGTB15N60S1EG Документы

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