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- NGTB20N60L2TF1G
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NGTB20N60L2TF1G Технические параметры
ON Semiconductor NGTB20N60L2TF1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 26 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3PFM, SC-93-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 1.45V | |
| Test Conditions | 300V, 20A, 30 Ω, 15V | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 64W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 64W | |
| Halogen Free | Halogen Free | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 40A | |
| Reverse Recovery Time | 70 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 20A | |
| Gate Charge | 84nC | |
| Current - Collector Pulsed (Icm) | 80A | |
| Td (on/off) @ 25°C | 60ns/193ns | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NGTB20N60L2TF1G Документы
- PCN Assembly/OriginMult Dev Assembly/Mold Chg 20/Mar/2019
- Environmental InformationMaterial Declaration NGTB20N60L2TF1G
- RohsStatementON-Semiconductor-NGTB20N60L2TF1G.pdf
- DatasheetsNGTB20N60L2TF1G NGTB20N60L2TF1G-ON-Semiconductor-datasheet-37177298.pdf
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