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NGTB25N120IHLWG Технические параметры

ON Semiconductor  NGTB25N120IHLWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 600V, 25A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 192W
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Standard
Power - Max 192W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A
Turn Off Time-Nom (toff) 475 ns
Gate Charge 200nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C -/235ns
Switching Energy 800μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NGTB25N120IHLWG Документы

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