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NGTB30N120FL2WG Технические параметры

ON Semiconductor  NGTB30N120FL2WG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 11 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Collector-Emitter Breakdown Voltage 1.2kV
Test Conditions 600V, 30A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 452W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 452W
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
Reverse Recovery Time 240 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 220nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 98ns/210ns
Switching Energy 2.6mJ (on), 700μJ (off)
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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