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NGTB30N135IHR1WG Технические параметры

ON Semiconductor  NGTB30N135IHR1WG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Collector-Emitter Breakdown Voltage 1.35kV
Test Conditions 600V, 30A, 10 Ω, 15V
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2015
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 394W
Input Type Standard
Power - Max 394W
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 60A
Voltage - Collector Emitter Breakdown (Max) 1350V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 220nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/200ns
Switching Energy 630μA (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NGTB30N135IHR1WG Документы

NGTB30N135IHR1WG brand manufacturers: ON Semiconductor, Anli stock, NGTB30N135IHR1WG reference price.ON Semiconductor. NGTB30N135IHR1WG parameters, NGTB30N135IHR1WG Datasheet PDF and pin diagram description download.You can use the NGTB30N135IHR1WG Transistors - IGBTs - Single, DSP Datesheet PDF, find NGTB30N135IHR1WG pin diagram and circuit diagram and usage method of function,NGTB30N135IHR1WG electronics tutorials.You can download from the Anli.