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NGTB30N60FWG Технические параметры

ON Semiconductor  NGTB30N60FWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 20 hours ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 167W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 167W
Input Type Standard
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 72ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
IGBT Type Trench
Gate Charge 170nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 81ns/190ns
Switching Energy 650μJ (on), 650μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

NGTB30N60FWG Документы

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