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NGTB40N120SWG Технические параметры

ON Semiconductor  NGTB40N120SWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2V
Test Conditions 600V, 40A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 535W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 535W
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 80A
Reverse Recovery Time 240 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
IGBT Type Trench
Gate Charge 313nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 116ns/286ns
Switching Energy 3.4mJ (on), 1.1mJ (off)
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

NGTB40N120SWG Документы

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