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NGTB50N60L2WG Технические параметры

ON Semiconductor  NGTB50N60L2WG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Factory Lead Time 21 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 600V
Test Conditions 400V, 50A, 10 Ω, 15V
Packaging Tube
Operating Temperature -55°C~175°C TJ
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 500W
Element Configuration Single
Input Type Standard
Power - Max 500W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Reverse Recovery Time 67 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
IGBT Type Trench Field Stop
Gate Charge 310nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 110ns/270ns
Switching Energy 800μJ (on), 600μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NGTB50N60L2WG Документы

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