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ON Semiconductor NGTB50N65FL2WG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 18 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Test Conditions | 400V, 50A, 10 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2015 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 417W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 417W | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 2V | |
| Max Collector Current | 100A | |
| Reverse Recovery Time | 94 ns | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 220nC | |
| Current - Collector Pulsed (Icm) | 200A | |
| Td (on/off) @ 25°C | 100ns/237ns | |
| Switching Energy | 1.5mJ (on), 460μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |