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NGTB60N60SWG Технические параметры

ON Semiconductor  NGTB60N60SWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.6V
Test Conditions 400V, 60A, 10 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 298W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 298W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 76 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
IGBT Type Trench Field Stop
Gate Charge 173nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 87ns/180ns
Switching Energy 1.41mJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

NGTB60N60SWG Документы

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