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NGTB60N65FL2WG Технические параметры
ON Semiconductor NGTB60N65FL2WG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 18 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 650V | |
| Collector-Emitter Saturation Voltage | 1.64V | |
| Test Conditions | 400V, 60A, 10 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2015 | |
| Pbfree Code | yes | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 595W | |
| Input Type | Standard | |
| Power - Max | 595W | |
| Collector Emitter Voltage (VCEO) | 2V | |
| Max Collector Current | 100A | |
| Reverse Recovery Time | 96 ns | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 60A | |
| IGBT Type | Field Stop | |
| Gate Charge | 318nC | |
| Current - Collector Pulsed (Icm) | 240A | |
| Td (on/off) @ 25°C | 117ns/265ns | |
| Switching Energy | 1.59mJ (on), 660μJ (off) | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NGTB60N65FL2WG Документы
- DatasheetsNGTB60N65FL2WG
- ReachStatementON-Semiconductor-company-79.pdf
- PCN Assembly/OriginNGTBYYY 28/Aug/2017
- Environmental InformationMaterial Declaration NGTB60N65FL2WG
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