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NGTG35N65FL2WG Технические параметры

ON Semiconductor  NGTG35N65FL2WG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 650V
Number of Elements 1 Element
Test Conditions 400V, 35A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 300W
Свойство продукта Значение свойства
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 70A
Turn On Time 108 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A
Turn Off Time-Nom (toff) 231 ns
IGBT Type Field Stop
Gate Charge 125nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 72ns/132ns
Switching Energy 840μJ (on), 280μJ (off)
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NGTG35N65FL2WG Документы

NGTG35N65FL2WG brand manufacturers: ON Semiconductor, Anli stock, NGTG35N65FL2WG reference price.ON Semiconductor. NGTG35N65FL2WG parameters, NGTG35N65FL2WG Datasheet PDF and pin diagram description download.You can use the NGTG35N65FL2WG Transistors - IGBTs - Single, DSP Datesheet PDF, find NGTG35N65FL2WG pin diagram and circuit diagram and usage method of function,NGTG35N65FL2WG electronics tutorials.You can download from the Anli.