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NJD1718T4G Технические параметры

ON Semiconductor  NJD1718T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 70
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Power Dissipation 1.68W
Свойство продукта Значение свойства
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.68W
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Transition Frequency 80MHz
Max Breakdown Voltage 50V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NJD1718T4G Документы

NJD1718T4G brand manufacturers: ON Semiconductor, Anli stock, NJD1718T4G reference price.ON Semiconductor. NJD1718T4G parameters, NJD1718T4G Datasheet PDF and pin diagram description download.You can use the NJD1718T4G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NJD1718T4G pin diagram and circuit diagram and usage method of function,NJD1718T4G electronics tutorials.You can download from the Anli.