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NJV4030PT1G Технические параметры

ON Semiconductor  NJV4030PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Weight 188.014037mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2W
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 160MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Gain Bandwidth Product 160MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A
Transition Frequency 160MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NJV4030PT1G Документы

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