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NJVMJD42CT4G Технические параметры

ON Semiconductor  NJVMJD42CT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Discrete Semiconductor Products
Марка ON Semiconductor
Lifecycle Status Production (Last Updated: 2 years ago)
Factory Lead Time 4 Weeks
Package / Case DPAK-3
Mounting Type Surface Mount
Surface Mount YES
Number of Pins 3Pins
Supplier Device Package DPAK
Transistor Polarity NPN
Collector-Emitter Saturation Voltage 1.5 V
Collector-Emitter Breakdown Voltage 100 V
hFEMin 30
Number of Elements 1 Element
Manufacturer Lifecycle Status ACTIVE (Last Updated: 2 years ago)
RoHS Compliant
Qualification AEC-Q101
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 1.75 W
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 30
Unit Weight 0.012346 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 3 MHz
Part # Aliases NJVMJD42CT4G-VF01
Manufacturer onsemi
Brand onsemi
Maximum DC Collector Current 6 A
DC Current Gain hFE Max 30 at 300 mA, 4 V
Collector- Emitter Voltage VCEO Max 100 V
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current-Collector (Ic) (Max) 6 A
Base Product Number NJVMJD42
Mfr onsemi
Product Status Active
Package Description ,
Moisture Sensitivity Levels 1
Manufacturer Package Code 369C
Operating Temperature-Max 150 °C
Transition Frequency-Nom (fT) 3 MHz
Manufacturer Part Number NJVMJD42CT4G
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Risk Rank 0.84
Свойство продукта Значение свойства
Packaging Tape & Reel (TR)
Series MJD42C
Operating Temperature -65°C ~ 150°C (TJ)
JESD-609 Code e3
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150 °C
Min Operating Temperature -65 °C
Subcategory Transistors
Max Power Dissipation 1.75 W
Technology Si
Reach Compliance Code not_compliant
Frequency 3 MHz
Pin Count 3
Polarity PNP
Configuration Single
Element Configuration Single
Power Dissipation 15
Power - Max 1.75 W
Gain Bandwidth Product 3 MHz
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100 V
Max Collector Current 6 A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 4V
Current - Collector Cutoff (Max) 50µA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max) 100 V
Max Frequency 1 MHz
Transition Frequency 3
Max Breakdown Voltage 100 V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 100 V
Power Dissipation-Max (Abs) 20 W
Emitter Base Voltage (VEBO) 5 V
Collector Current-Max (IC) 6 A
DC Current Gain-Min (hFE) 15
Continuous Collector Current 3
Product Category Bipolar Transistors - BJT
Width 6.22 mm
Height 2.38 mm
Length 6.73 mm
Radiation Hardening No
Lead Free Lead Free
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NJVMJD42CT4G Документы

  • Datasheets
NJVMJD42CT4G brand manufacturers: ON Semiconductor, Anli stock, NJVMJD42CT4G reference price.ON Semiconductor. NJVMJD42CT4G parameters, NJVMJD42CT4G Datasheet PDF and pin diagram description download.You can use the NJVMJD42CT4G Discrete Semiconductor Products, DSP Datesheet PDF, find NJVMJD42CT4G pin diagram and circuit diagram and usage method of function,NJVMJD42CT4G electronics tutorials.You can download from the Anli.