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NJVMJD45H11T4G Технические параметры

ON Semiconductor  NJVMJD45H11T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Max Power Dissipation 1.75W
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.75W
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 90MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transition Frequency 90MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NJVMJD45H11T4G Документы

NJVMJD45H11T4G brand manufacturers: ON Semiconductor, Anli stock, NJVMJD45H11T4G reference price.ON Semiconductor. NJVMJD45H11T4G parameters, NJVMJD45H11T4G Datasheet PDF and pin diagram description download.You can use the NJVMJD45H11T4G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NJVMJD45H11T4G pin diagram and circuit diagram and usage method of function,NJVMJD45H11T4G electronics tutorials.You can download from the Anli.