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NJVNJD35N04T4G Технические параметры

ON Semiconductor  NJVNJD35N04T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 22 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 350V
hFEMin 2000
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 45W
Свойство продукта Значение свойства
Base Part Number NJD35N04
Pin Count 3
Polarity NPN
Element Configuration Single
Power Dissipation 45W
Halogen Free Halogen Free
Gain Bandwidth Product 90MHz
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A 2V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 2A
Transition Frequency 90MHz
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NJVNJD35N04T4G Документы

NJVNJD35N04T4G brand manufacturers: ON Semiconductor, Anli stock, NJVNJD35N04T4G reference price.ON Semiconductor. NJVNJD35N04T4G parameters, NJVNJD35N04T4G Datasheet PDF and pin diagram description download.You can use the NJVNJD35N04T4G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NJVNJD35N04T4G pin diagram and circuit diagram and usage method of function,NJVNJD35N04T4G electronics tutorials.You can download from the Anli.