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NRVB120ESFT3G Технические параметры

ON Semiconductor  NRVB120ESFT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case SOD-123
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form FLAT
Base Part Number MBR120
Pin Count 2
Reference Standard AEC-Q101
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 10μA @ 20V
Voltage - Forward (Vf) (Max) @ If 530mV @ 1A
Forward Current 1A
Operating Temperature - Junction -65°C~150°C
Output Current-Max 1A
Halogen Free Halogen Free
Max Reverse Voltage (DC) 20V
Average Rectified Current 1A
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 20V
Peak Non-Repetitive Surge Current 40A
Max Forward Surge Current (Ifsm) 40A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NRVB120ESFT3G Документы

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