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NRVB830MFST3G Технические параметры

ON Semiconductor  NRVB830MFST3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Factory Lead Time 5 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Applications EFFICIENCY
Additional Feature LOW POWER LOSS
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F5
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 200μA @ 30V
Voltage - Forward (Vf) (Max) @ If 700mV @ 8A
Case Connection CATHODE
Operating Temperature - Junction -40°C~150°C
Output Current-Max 8A
Forward Voltage 700mV
Max Reverse Voltage (DC) 30V
Average Rectified Current 8A
Number of Phases 1Phase
Peak Reverse Current 200μA
Max Repetitive Reverse Voltage (Vrrm) 30V
Peak Non-Repetitive Surge Current 150A
RoHS Status ROHS3 Compliant

NRVB830MFST3G Документы

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