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NRVBM120ET3G Технические параметры

ON Semiconductor  NRVBM120ET3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case DO-216AA
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Series POWERMITE®
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1Termination
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Terminal Form GULL WING
Pin Count 2
Свойство продукта Значение свойства
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 500nA @ 5V
Voltage - Forward (Vf) (Max) @ If 595mV @ 2A
Case Connection CATHODE
Forward Current 1A
Max Reverse Leakage Current 10μA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 50A
Output Current-Max 1A
Halogen Free Halogen Free
Forward Voltage 595mV
Max Reverse Voltage (DC) 20V
Average Rectified Current 1A
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 20V
Peak Non-Repetitive Surge Current 50A
Max Forward Surge Current (Ifsm) 50A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NRVBM120ET3G Документы

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