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NRVBS360BT3G Технические параметры

ON Semiconductor  NRVBS360BT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Surface Mount YES
Number of Pins 2Pins
Weight 179.991122mg
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications POWER
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form J BEND
Pin Count 2
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 30μA @ 60V
Voltage - Forward (Vf) (Max) @ If 630mV @ 3A
Forward Current 4A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 4A
Current - Average Rectified (Io) 3A
Forward Voltage 630mV
Max Reverse Voltage (DC) 60V
Average Rectified Current 4A
Number of Phases 1Phase
Peak Reverse Current 3mA
Max Repetitive Reverse Voltage (Vrrm) 60V
Peak Non-Repetitive Surge Current 125A
Max Forward Surge Current (Ifsm) 125A
Height 2.09mm
Length 4.6mm
Width 3.95mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

NRVBS360BT3G Документы

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