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NRVUS360VDBT3G Технические параметры

ON Semiconductor  NRVUS360VDBT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 175°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Applications HIGH VOLTAGE ULTRA FAST RECOVERY POWER
Additional Feature FREE WHEELING DIODE
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form J BEND
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-J2
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 3μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 3A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 3A
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 3A
Number of Phases 1Phase
Reverse Recovery Time 75ns
Rep Pk Reverse Voltage-Max 600V
Non-rep Pk Forward Current-Max 100A
Reverse Current-Max 3μA
RoHS Status ROHS3 Compliant

NRVUS360VDBT3G Документы

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